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MRF6S18140HR3 mrf6s18140hsr3 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for n - cdma base station applications with frequencies from 1805 to 1880 mhz. suitable for tdma, cdma and multicarrier amplifier applica- tions. to be used in class ab fo r p c n - p c s / c e l l u l a r r a d i o a n d w l l applications. ? typical 2 - carrier n - cdma performance: v dd = 28 volts, i dq = 1200 ma, p out = 29 watts avg., full frequency band, is - 95 cdma (pilot, sync, paging, traffic codes 8 through 13) channel bandwidth = 1.2288 mhz. par = 9.8 db @ 0.01% probability on ccdf. power gain ? 16 db drain efficiency ? 27.5% im3 @ 2.5 mhz offset ? - 36 dbc in 1.2288 mhz bandwidth acpr @ 885 khz offset ? - 50.5 dbc in 30 khz bandwidth ? capable of handling 10:1 vswr, @ 28 vdc, 1840 mhz, 140 watts cw output power features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? lower thermal resistance package ? designed for lower memory effects and wide instantaneous bandwidth applications ? low gold plating thickness on leads, 40 nominal. ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +68 vdc gate - source voltage v gs - 0.5, +12 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 80 c, 140 w cw case temperature 73 c, 29 w cw r jc 0.31 0.35 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select tools/software/application software/calculators to access the mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrf6s18140h rev. 0, 9/2006 freescale semiconductor technical data MRF6S18140HR3 mrf6s18140hsr3 1805 - 1880 mhz, 29 w avg., 28 v 2 x n - cdma lateral n - channel rf power mosfets case 465c - 02, style 1 ni - 880s mrf6s18140hsr3 case 465b - 03, style 1 ni - 880 MRF6S18140HR3 ? freescale semiconductor, inc., 2006. all rights reserved.
2 rf device data freescale semiconductor MRF6S18140HR3 mrf6s18140hsr3 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 2 (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 68 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 300 adc) v gs(th) 1.2 2 2.7 vdc gate quiescent voltage (v ds = 28 vdc, i d = 1200 madc, measured in functional test) v gs(q) 2 2.7 3.8 vdc drain - source on - voltage (v gs = 10 vdc, i d = 3 adc) v ds(on) 0.1 0.22 0.3 vdc dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2.2 ? pf output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 685 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 1200 ma, p out = 29 w avg., f1 = 1805 mhz, f2 = 1807.5 mhz and f1 = 1877.5 mhz, f2 = 1880 mhz, 2 - carrier n - cdma, 1.2288 mhz channel bandwidth carriers. acpr measured in 30 khz channel bandwidth @ 885 khz offset. im3 measured in 1.2288 mhz channel bandwidth @ 2.5 mhz offset. par = 9.8 db @ 0.01% probability on ccdf. power gain g ps 15 16 18 db drain efficiency d 25.5 27.5 ? % intermodulation distortion im3 ? -36 - 34.5 dbc adjacent channel power ratio acpr ? - 50.5 -48 dbc input return loss irl ? - 10.5 ? db 1. part internally matched both on input and output.
MRF6S18140HR3 mrf6s18140hsr3 3 rf device data freescale semiconductor figure 1. MRF6S18140HR3(hsr3) test circuit schematic z13 0.108 x 1.070 microstrip z14 0.960 x 0.046 microstrip z15 0.084 x 0.046 microstrip z16 0.996 x 0.080 microstrip z17 1.015 x 0.080 microstrip z18 0.099 x 1.070 microstrip z19 0.516 x 1.070 microstrip z20 0.292 x 0.288 microstrip z21 0.198 x 0.114 microstrip z22 0.372 x 0.080 microstrip z23 1.181 x 0.080 microstrip pcb ds electronics gx0300, 0.030 , r = 2.55 z1 0.166 x 0.082 microstrip z2 0.250 x 0.334 microstrip z3 0.140 x 0.340 microstrip z4 0.092 x 0.164 microstrip z5 0.130 x 0.234 microstrip z6 0.109 x 0.082 microstrip z7 0.070 x 0.082 microstrip z8 0.350 x 0.644 microstrip z9 0.092 x 0.420 microstrip z10 0.720 x 0.082 microstrip z11 0.090 x 0.485 x 0.580 taper z12 0.342 x 1.070 microstrip v bias v supply rf output rf input dut c4 r3 z4 z5 z6 z7 c1 z8 r5 z16 z13 z19 z9 z20 c2 c10 c12 c13 c16 + c6 z21 z22 z23 b1 r1 c11 c14 c15 z18 z17 z12 z14 z15 z11 z10 z1 z2 z3 c8 + c5 r4 r6 c3 b2 r2 c9 + c7 table 5. MRF6S18140HR3(hsr3) test circuit component designations and values part description part number manufacturer b1, b2 47 , 100 mhz small ferrite beads, surface mount 2743019447 fair - rite c1, c2 39 pf chip capacitors 700b390fw500xt atc c3 0.1 pf chip capacitor 100b0r1bp500x atc c4, c5, c12, c13, c14, c15 10 f, 50 v chip capacitors grm55dr61h106ka88b murata c6, c7, c10, c11 9.1 pf chip capacitors 600b9r1bt250xt atc c8, c9 47 f, 50 v electrolytic capacitors mvk50vc47rm8x10tp united chemi - con c16 470 f, 63 v electrolytic capacitor naczf471m63v nippon chemi - con r1, r2 12 , 1/8 w resistors crcw120612r0f100 dale/vishay r3, r4 1.0 k , 1/8 w resistors crcw12061001f100 dale/vishay r5, r6 560 k , 1/8 w chip resistors crcw12065602f101 dale/vishay
4 rf device data freescale semiconductor MRF6S18140HR3 mrf6s18140hsr3 figure 2. MRF6S18140HR3(hsr3) test circuit component layout + c8 r5 r1 b1 r3 c6 c4 c1 c9 r6 r4 b2 r2 c5 c3 c11 c14 c15 c2 c10 c12 c13 c16 cut out area mrf6s18140h/hs rev. 1 + c7
MRF6S18140HR3 mrf6s18140hsr3 5 rf device data freescale semiconductor typical characteristics irl, input return loss (db) im3 (dbc), acpr (dbc) 1920 1760 irl g ps acpr im3 f, frequency (mhz) figure 3. 2 - carrier n - cdma broadband performance @ p out = 29 watts avg. ?20 0 ?4 ?8 ?12 v dd = 28 vdc, p out = 29 w (avg.) i dq = 1200 ma, 2?carrier n?cdma 2.5 mhz carrier spacing, 1.2288 mhz channel bandwidth, par = 9.8 db @ 0.01% probability (ccdf) 1880 1840 1800 14.8 16.8 ?54 30 29 28 26 ?24 ?30 ?36 ?42 d , drain efficiency (%) d g ps , power gain (db) 16.6 16.4 16.2 16 15.8 15.6 15.4 15.2 15 1780 1820 1860 1900 27 ?48 ?16 irl, input return loss (db) im3 (dbc), acpr (dbc) 1920 1760 irl g ps acpr im3 f, frequency (mhz) figure 4. 2 - carrier n - cdma broadband performance @ p out = 60 watts avg. ?20 0 ?4 ?8 ?12 v dd = 28 vdc, p out = 60 w (avg.) i dq = 1200 ma, 2?carrier n?cdma 2.5 mhz carrier spacing, 1.2288 mhz channel bandwidth, par = 9.8 db @ 0.01% probability (ccdf) 1880 1840 1800 14.4 16.4 ?42 42 41 40 38 ?12 ?18 ?24 ?30 d , drain efficiency (%) d g ps , power gain (db) 16.2 16 15.8 15.6 15.4 15.2 15 14.8 14.6 1780 1820 1860 1900 39 ?36 ?16 figure 5. two - tone power gain versus output power 100 13 19 1 i dq = 1800 ma 1500 ma v dd = 28 vdc f1 = 1838.75 mhz, f2 = 1841.25 mhz two?tone measurements, 2.5 mhz tone spacing 18 17 15 10 400 p out , output power (watts) pep g ps , power gain (db) 14 16 900 ma 1200 ma 600 ma figure 6. third order intermodulation distortion versus output power ?10 1 100 ?20 ?30 ?40 400 ?60 ?50 v dd = 28 vdc f1 = 1838.75 mhz, f2 = 1841.25 mhz two?tone measurements, 2.5 mhz tone spacing 10 p out , output power (watts) pep intermodulation distortion (dbc) imd, third order i dq = 600 ma 1500 ma 900 ma 1200 ma 1800 ma
6 rf device data freescale semiconductor MRF6S18140HR3 mrf6s18140hsr3 typical characteristics figure 7. intermodulation distortion products versus output power p out , output power (watts) pep imd, intermodulation distortion (dbc) ?70 ?10 1 100 ?40 ?50 10 ?30 ?20 ?60 7th order v dd = 28 vdc, i dq = 1200 ma f1 = 1838.75 mhz, f2 = 1841.25 mhz two?tone measurements 5th order 3rd order figure 8. intermodulation distortion products versus tone spacing 10 ?5 two?tone spacing (mhz) v dd = 28 vdc, p out = 140 w (pep), i dq = 1200 ma two?tone measurements, (f1 + f2)/2 = center frequency of 1840 mhz im7?u ?30 ?35 ?40 ?45 ?50 ?55 1 100 imd, intermodulation distortion (dbc) figure 9. pulsed cw output power versus input power 44 60 33 p in , input power (dbm) v dd = 28 vdc, i dq = 1200 ma pulsed cw, 12 sec(on), 1% duty cycle f = 1840 mhz 58 56 54 52 49 34 36 35 38 37 41 39 actual ideal p1db = 52.6 dbm (182.64 w) 59 57 53 55 40 42 32 p out , output power (dbm) p6db = 53.90 dbm (245.47 w) figure 10. 2 - carrier n - cdma acpr, im3, power gain and drain efficiency versus output power 0 ?70 p out , output power (watts) cw 50 ?20 25 ?30 20 ?35 15 ?50 5 ?65 1 10 100 ?55 10 ?30 c 25 c 85 c im3 d g ps t c = ?30 c acpr d , drain efficiency (%), g ps , power gain (db) im3 (dbc), acpr (dbc) 50 p3db = 53.36 dbm (216.77 w) 400 im7?l im5?l im5?u im3?l im3?u ?25 ?20 ?15 ?10 43 51 30 35 40 45 ?60 ?45 ?40 ?25 25 c 85 c v dd = 28 vdc, i dq = 1200 ma f1 = 1838.75 mhz, f2 = 1841.25 mhz 2?carrier n?cdma, 2.5 mhz carrier spacing, 1.2288 mhz channel bandwidth, par = 9.8 db @ 0.01% probability (ccdf)
MRF6S18140HR3 mrf6s18140hsr3 7 rf device data freescale semiconductor typical characteristics 100 12 1 0 66 p out , output power (watts) cw figure 11. power gain and drain efficiency versus cw output power v dd = 28 vdc i dq = 1200 ma f = 1840 mhz t c = ?30 c 25 c 10 18 17 16 15 14 55 44 33 22 11 d , drain efficiency (%) g ps d g ps , power gain (db) 13 400 85 c ?30 c 25 c 85 c figure 12. power gain versus output power p out , output power (watts) cw g ps , power gain (db) 13 17 0 260 15 14 100 200 16 v dd = 24 v 28 v 32 v i dq = 1200 ma f = 1840 mhz 230 10 10 t j , junction temperature ( c) this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. 10 9 10 8 10 6 mttf factor (hours x amps 2 ) 90 110 130 150 170 190 figure 13. mttf factor versus junction temperature 10 7 210 250
8 rf device data freescale semiconductor MRF6S18140HR3 mrf6s18140hsr3 10 0.0001 100 0 peak?to?average (db) figure 14. 2 - carrier ccdf n - cdma 10 1 0.1 0.01 0.001 2468 is?95 cdma (pilot, sync, paging, traffic codes 8 through 13) 1.2288 mhz channel bandwidth carriers. acpr measured in 30 khz bandwidth @ 885 khz offset. im3 measured in 1.2288 mhz bandwidth @ 2.5 mhz offset. par = 9.8 db @ 0.01% probability on ccdf. probability (%) f, frequency (mhz) ?100 0 figure 15. 2 - carrier n - cdma spectrum ?10 ?20 ?30 ?40 ?50 ?60 ?70 ?80 ?90 ?acpr in 30 khz integrated bw +acpr in 30 khz integrated bw ?im3 in 1.2288 mhz integrated bw +im3 in 1.2288 mhz integrated bw 1.2288 mhz channel bw 6 1.5 4.5 3 0 ?1.5 ?3 ?4.5 ?6 ?7.5 7.5 (db)
MRF6S18140HR3 mrf6s18140hsr3 9 rf device data freescale semiconductor z o = 10 z load f = 1920 mhz z source f = 1760 mhz f = 1760 mhz f = 1920 mhz v dd = 28 vdc, i dq = 1200 ma, p out = 29 w avg. f mhz z source z load 1760 1.454 - j6.703 1.344 - j2.479 1780 1.465 - j6.511 1.338 - j2.299 1800 1.467 - j6.336 1.333 - j2.129 1820 1.448 - j6.193 1.325 - j1.966 1840 1.440 - j6.049 1.308 - j1.801 1860 1.414 - j5.938 1.301 - j1.687 1880 1.377 - j5.827 1.303 - j1.550 1900 1.311 - j5.710 1.301 - j1.419 1920 1.231 - j5.583 1.289 - j1.303 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 16. series equivalent source and load impedance z source z load input matching network device under test output matching network
10 rf device data freescale semiconductor MRF6S18140HR3 mrf6s18140hsr3 package dimensions case 465b - 03 issue d ni - 880 mrf6s18140h notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. 4. deleted dim min max min max millimeters inches a 1.335 1.345 33.91 34.16 b 0.535 0.545 13.6 13.8 c 0.147 0.200 3.73 5.08 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 g 1.100 bsc 27.94 bsc h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.871 0.889 19.30 22.60 q .118 .138 3.00 3.51 r 0.515 0.525 13.10 13.30 style 1: pin 1. drain 2. gate 3. source 1 3 2 d g k c e h f q 2x m a m bbb b m t m a m bbb b m t b b (flange) seating plane m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) s m a m aaa b m t (insulator) r m a m ccc b m t (lid) s 0.515 0.525 13.10 13.30 m 0.872 0.888 22.15 22.55 aaa 0.007 ref 0.178 ref bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref case 465c - 02 issue d ni - 880s mrf6s18140hs notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 0.905 0.915 22.99 23.24 b 0.535 0.545 13.60 13.80 c 0.147 0.200 3.73 5.08 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.871 0.889 19.30 22.60 r 0.515 0.525 13.10 13.30 style 1: pin 1. drain 2. gate 3. source 1 seating plane 2 d k c e h f m a m bbb b m t b b (flange) m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) m a m ccc b m t m a m aaa b m t r (lid) s (insulator) s 0.515 0.525 13.10 13.30 m 0.872 0.888 22.15 22.55 bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref aaa 0.007 ref 0.178 ref
MRF6S18140HR3 mrf6s18140hsr3 11 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. date revision number description sept. 2006 0 ? initial release of data sheet
12 rf device data freescale semiconductor MRF6S18140HR3 mrf6s18140hsr3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6s18140h rev. 0, 9/2006

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